Thermoelectric and electrical transport properties of Mg<sub>2</sub>Si multi-doped with Sb, Al and Zn
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- Tsutomu Iida
- Department of Materials Science and Technology
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- Joel Reid
- Canadian Light Source Inc
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- John S. Tse
- Department of Physics and Engineering Physics
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- Kenichi Takarabe
- Department of Applied Science
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- Zhenxian Liu
- Geophysical Laboratory
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- Uwatoko Yoshiya
- The Institute for Solid State Physics
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- Bosen Wang
- The Institute for Solid State Physics
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- Jianbao Zhao
- Department of Physics and Engineering Physics
書誌事項
- 公開日
- 2015
- 資源種別
- journal article
- DOI
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- 10.1039/c5ta03751d
- 公開者
- Royal Society of Chemistry (RSC)
この論文をさがす
説明
<p>A maximum<italic>ZT</italic>of 0.964 was found for Sb0.5%Zn0.5% doped Mg2Si, which is comparable to those of PbTe based thermoelectric materials.</p>
収録刊行物
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- Journal of Materials Chemistry A
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Journal of Materials Chemistry A 3 (39), 19774-19782, 2015
Royal Society of Chemistry (RSC)
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詳細情報 詳細情報について
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- CRID
- 1360004233602017152
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- ISSN
- 20507496
- 20507488
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- 資料種別
- journal article
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- データソース種別
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- Crossref
- KAKEN
- OpenAIRE
