Mg doped InN and confirmation of free holes in InN

DOI PDF 被引用文献12件 参考文献17件
  • K. Wang
    Ritsumeikan University 1 Research Organization of Science and Engineering, , 1-1-1 Noji Higashi, Kusatsu, Shiga 525-8577, Japan
  • N. Miller
    University of California 2 Department of Materials Science and Engineering, , Berkeley, California 94720, USA
  • R. Iwamoto
    Ritsumeikan University 4 Department of Photonics, , 1-1-1 Noji Higashi, Kusatsu, Shiga 525-8577, Japan
  • T. Yamaguchi
    Ritsumeikan University 1 Research Organization of Science and Engineering, , 1-1-1 Noji Higashi, Kusatsu, Shiga 525-8577, Japan
  • M. A. Mayer
    University of California 2 Department of Materials Science and Engineering, , Berkeley, California 94720, USA
  • T. Araki
    Ritsumeikan University 4 Department of Photonics, , 1-1-1 Noji Higashi, Kusatsu, Shiga 525-8577, Japan
  • Y. Nanishi
    Ritsumeikan University 4 Department of Photonics, , 1-1-1 Noji Higashi, Kusatsu, Shiga 525-8577, Japan
  • K. M. Yu
    Lawrence Berkeley National Laboratory 3 Materials Sciences Division, , Berkeley, California 94720, USA
  • E. E. Haller
    University of California 2 Department of Materials Science and Engineering, , Berkeley, California 94720, USA
  • W. Walukiewicz
    Lawrence Berkeley National Laboratory 3 Materials Sciences Division, , Berkeley, California 94720, USA
  • J. W. Ager
    Lawrence Berkeley National Laboratory 3 Materials Sciences Division, , Berkeley, California 94720, USA

書誌事項

公開日
2011-01-24
資源種別
journal article
DOI
  • 10.1063/1.3543625
公開者
AIP Publishing

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説明

<jats:p>We report a systematic investigation on Mg doped InN epilayers grown by radio-frequency plasma-assisted molecular beam epitaxy. Electrolyte capacitance voltage (ECV) combined with thermopower measurements find p-type conduction over an Mg concentration range. For InN:Mg in this p-type “window” the Seebeck coefficients dramatically change their signs from negative to positive when the thickness of undoped InN interlayer decreases to zero. This notable sign change of Seebeck coefficient explains the previous inconsistency between ECV and thermopower results and confirms the existence of mobile holes in the InN:Mg. Taking into account the undoped InN interlayer, the hole density and mobility are extracted.</jats:p>

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