Synchrotron beam test of a photon counting pixel prototype based on Double-SOI technology

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書誌事項

公開日
2017-01-13
資源種別
journal article
権利情報
  • http://iopscience.iop.org/info/page/text-and-data-mining
  • http://iopscience.iop.org/page/copyright
DOI
  • 10.1088/1748-0221/12/01/c01037
公開者
IOP Publishing

説明

The overall noise performances and first synchrotron beam measurement results of CPIXETEG3b, the first counting type Silicon-On-Insulator (SOI) pixel sensor prototype without crosstalk issue, are reported. The prototype includes a 64 × 64 pixel matrix with 50 μm pitch size. Each pixel consists of an N-in-P charge collection diode, a charge sensitive preamplifier, a shaper, a discriminator with thresholds adjustable by an in-pixel 4-bit DAC, and a 6-bit counter. The study was performed using the beam line 14A at KEK Photon Factory (KEK-PF) . The homogeneous response of the prototype, including charging-sharing effects between pixels were studied. 16 keV and 8 keV monochromatic small size (~ 10 μm diameter) X-ray beams were used for the charge sharing study, and a flat-field was added for homogenous response investigation. The overall detector homogeneity and the influence of basic detector parameters on charge sharing between pixels has been investigated.

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