Pressure-induced electron topological transitions in Ba-doped Si clathrate

DOI Web Site Web Site 被引用文献1件 参考文献35件

書誌事項

公開日
2011-11-14
資源種別
journal article
権利情報
  • http://link.aps.org/licenses/aps-default-license
DOI
  • 10.1103/physrevb.84.184105
公開者
American Physical Society (APS)

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説明

Ba${}_{8}$Si${}_{46}$ is the archetype of the Si clathrates family. X-ray diffractions have revealed an unusual homothetic isostructural transition at \ensuremath{\sim}14--16 GPa. Raman experiments, however, suggested even more transitions at lower pressure. We present evidence showing that successive electronic topological transitions are responsible for the transformations. It is shown that the electronic structure of Ba${}_{8}$Si${}_{46}$ is easily perturbed by the environment. Reverse Monte Carlo calculations and in-situ resistivity measurements revealed continual changes in the structure and electrical properties upon compression. This finding is corroborated by results of x-ray Raman scattering study in the vicinity of the Ba ${N}_{4,5}$ and Si ${L}_{2,3}$ absorption edges.

収録刊行物

  • Physical Review B

    Physical Review B 84 (18), 2011-11-14

    American Physical Society (APS)

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