Ambipolar transport in bulk crystals of a topological insulator by gating with ionic liquid
書誌事項
- 公開日
- 2012-08-14
- 資源種別
- journal article
- 権利情報
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- http://link.aps.org/licenses/aps-default-license
- DOI
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- 10.1103/physrevb.86.075306
- 10.48550/arxiv.1203.2047
- 公開者
- American Physical Society (APS)
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説明
We report that the ionic-liquid gating of bulk single crystals of a topological insulator can control the type of the surface carriers and even results in ambipolar transport. This was made possible by the use of a highly bulk-insulating BiSbTeSe2 system where the chemical potential is located close to both the surface Dirac point and the middle of the bulk band gap. Thanks to the use of ionic liquid, the control of the surface chemical potential by gating was possible on the whole surface of a bulk three-dimensional sample, opening new experimental opportunities for topological insulators. In addition, our data suggest the existence of a nearly reversible electrochemical reaction that causes bulk carrier doping into the crystal during the ionic-liquid gating process.
7 pages, 6 figures, 2 tables; significantly expanded version to fully discuss the gating process and its side effects; published in PRB
収録刊行物
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- Physical Review B
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Physical Review B 86 (7), 075306-, 2012-08-14
American Physical Society (APS)
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詳細情報 詳細情報について
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- CRID
- 1360004234982840832
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- ISSN
- 1550235X
- 10980121
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- 資料種別
- journal article
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- データソース種別
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- Crossref
- KAKEN
- OpenAIRE