Trapping of a photoexcited electron by a donor in nanometer-scale phosphorus-doped silicon-on-insulator field-effect transistors

DOI PDF 被引用文献3件
  • Arief Udhiarto
    Shizuoka University 1 Research Institute of Electronics, , 3-5-1 Johoku, Nakaku, Hamamatsu 432-8011, Japan
  • Daniel Moraru
    Shizuoka University 1 Research Institute of Electronics, , 3-5-1 Johoku, Nakaku, Hamamatsu 432-8011, Japan
  • Takeshi Mizuno
    Shizuoka University 1 Research Institute of Electronics, , 3-5-1 Johoku, Nakaku, Hamamatsu 432-8011, Japan
  • Michiharu Tabe
    Shizuoka University 1 Research Institute of Electronics, , 3-5-1 Johoku, Nakaku, Hamamatsu 432-8011, Japan

書誌事項

公開日
2011-09-12
DOI
  • 10.1063/1.3637445
公開者
AIP Publishing

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説明

<jats:p>We study interaction of single-electron current and incident photons in nanometer-scale phosphorus-doped silicon-on-insulator field-effect transistors. Trapping events of a photoexcited-electron by a trap donor are observed as random telegraph signals in single-electron-tunneling current flowing through a current-path donor. Trapping causes a potential change at the current-path donor, inducing a current change. An opposite current change is caused by electron detrapping from the trap donor to the current-path donor. This indicates that only a few donors (two donors in this study) work in the interaction between single-electron transport and photoexcited-electron trapping, even in the presence of many donors.</jats:p>

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