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説明
Abstract The epitaxial growth of InN was tried on (0001) sapphire substrates by vapor phase epitaxy using InCl or InCl 3 as In sources, NH 3 or monomethylhydrazine (MMHy) as N sources. From the combination of these sources, the InCl 3 NH 3 system was the most suitable one to obtain an appreciable growth rate of hexagonal InN. The growth rate of InN in the InCl 3 NH 3 system has been investigated as a function of the various growth parameters. The results showed that the growth of InN in the InCl 3 NH 3 system was mass transport limited. In addition, it was found that the growth in an inert carrier gas was indispensable for a high growth rate of InN growth using the InCl 3 NH 3 system.
収録刊行物
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- Journal of Crystal Growth
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Journal of Crystal Growth 172 (3-4), 298-302, 1997-03
Elsevier BV
