Room temperature spin valve effect in NiFe/WS2/Co junctions

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<jats:title>Abstract</jats:title><jats:p>The two-dimensional (2D) layered electronic materials of transition metal dichalcogenides (TMDCs) have been recently proposed as an emerging canddiate for spintronic applications. Here, we report the exfoliated single layer WS<jats:sub>2</jats:sub>-intelayer based spin valve effect in NiFe/WS<jats:sub>2</jats:sub>/Co junction from room temperature to 4.2 K. The ratio of relative magnetoresistance in spin valve effect increases from 0.18% at room temperature to 0.47% at 4.2 K. We observed that the junction resistance decreases monotonically as temperature is lowered. These results revealed that semiconducting WS<jats:sub>2</jats:sub> thin film works as a metallic conducting interlayer between NiFe and Co electrodes.</jats:p>

Journal

  • Scientific Reports

    Scientific Reports 6 (1), 21038-, 2016-02-12

    Springer Science and Business Media LLC

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