Transparent conducting ZnO thin films deposited by vacuum arc plasma evaporation
書誌事項
- 公開日
- 2003-12
- 権利情報
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- https://www.elsevier.com/tdm/userlicense/1.0/
- DOI
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- 10.1016/s0040-6090(03)01159-3
- 公開者
- Elsevier BV
この論文をさがす
説明
A high rate deposition of co-doped ZnO:Ga,F and ZnO-In 2 O 3 multicomponent oxide thin films on large area substrates has been attained by a vacuum arc plasma evaporation method using oxide fragments as a low-cost source material. Highly transparent and conductive ZnO:Ga,F and ZnO-In 2 O 3 thin films were prepared on low temperature substrates at a deposition rate of approximately 375 nm/min with a cathode plasma power of 10 kW. A resistivity of 4.5×10 -4 Ω cm was obtained in ZnO:Ga,F films deposited at 100°C using ZnO fragments co-doped with 1 wt.% ZnF 2 and 1 wt.% Ga 2 O 3 as the source material. In addition, the stability in acid solution of ZnO films was improved by co-doping. It was found that the Zn/(In+Zn) atomic ratio in the deposited ZnO-In 2 O 3 thin films was approximately the same as that in the fragments used. The ZnO-In 2 O 3 thin films with a Zn/(In+Zn) atomic ratio of approximately 10-30 at.% deposited on substrates at 100°C exhibited an amorphous and smooth surface as well as a low resistivity of 3-4×10 -4 Ω cm.
収録刊行物
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- Thin Solid Films
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Thin Solid Films 445 (2), 268-273, 2003-12
Elsevier BV