S doping in ZnO film by supplying ZnS species with pulsed-laser-deposition method

DOI PDF 8 Citations
  • Y.-Z. Yoo
    National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
  • Zheng-Wu Jin
    National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
  • T. Chikyow
    National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
  • T. Fukumura
    Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
  • M. Kawasaki
    Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
  • H. Koinuma
    Materials and Structures laboratory, Tokyo Institute of Technology, 4259, Yokohama 226-8503, Japan

Description

<jats:p>S-doped ZnO (ZnO:S) film was fabricated by supplying ZnS species from laser ablation of a ZnS target during ZnO growth. Variations of lattice constants and band gaps with respect to S content did not follow Vegard’s law. The ZnO:S film showed semiconducting behavior with lower activation energy and resistivity than those of ZnO owing to higher carrier concentration. Despite the absence of magnetic elements, the large magnetoresistance amount of 26% was observed at 3 K from ZnO:S film.</jats:p>

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