Single-crystal-aluminum Schottky-barrier diodes prepared by molecular-beam epitaxy (MBE) on GaAs

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Published
1978-06-01
DOI
  • 10.1063/1.325286
Publisher
AIP Publishing

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<jats:p>Metal-semiconductor surface barriers were formed by epitaxially grown Al(001) on GaAs(001) with MBE at room temperature. The diodes exhibit nearly ideal electrical characteristics. It is also demonstrated that different barrier heights may be achieved by growing Al layers on MBE GaAs surfaces with different surface stoichiometries.</jats:p>

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