Quantitative distribution analysis of B, As and Sb in the layer system SiO2/Si with SIMS: elimination of matrix and charging effects

詳細情報 詳細情報について

• CRID

  1360011144362538240

• DOI

  10.1007/bf00469821

• ISSN

  00161152

• Web Site

  http://link.springer.com/content/pdf/10.1007/BF00469821.pdf

  http://link.springer.com/article/10.1007/BF00469821/fulltext.html

  http://link.springer.com/content/pdf/10.1007/BF00469821

• データソース種別

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