Interfacial Reaction between Nickel Oxide and Lanthanum Gallate during Sintering and its Effect on Conductivity

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書誌事項

公開日
1999-09
権利情報
  • http://onlinelibrary.wiley.com/termsAndConditions#vor
DOI
  • 10.1111/j.1151-2916.1999.tb02096.x
公開者
Wiley

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説明

<jats:p> The results of interdiffusion and reaction between NiO and strontium‐ and magnesium‐doped lanthanum gallate (LSGM) during sintering were investigated. Electron microprobe analysis showed that the NiO content of LSGM sintered 4 h at 1350°C was slightly >2 wt% within 5 µm of the interface, which is equivalent to 7 mol% nickel on B cation sites. This concentration decreased rapidly to <0.25% at a distance of 15 µm. The interfacial reaction between NiO and LSGM, however, led to the formation of a LaSrGa(Ni)O <jats:sub>4‐delta</jats:sub> ‐type phase. A separate experiment involving conductivity measurements of nickel‐doped LSGM indicated that the oxygenion conductivity did not decrease significantly if the nickel content was <5%‐8%. At higher nickel contents, the conductivity increased in air because of hole conduction and markedly decreased under conditions of low oxygen pressure because of the formation of the LaSrGa(Ni)O <jats:sub>4‐delta</jats:sub> ‐type phase. The nickel ions in the LSGM electrolyte and in the reaction product, LaSrGa(Ni)O <jats:sub>4‐delta</jats:sub> , were stable as Ni <jats:sup>2+</jats:sup> at reduced oxygen pressures and, therefore, did not cause electronic shorting. </jats:p>

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