Flexible high gain complementary inverter using n-ZnO and p-pentacene channels on polyethersulfone substrate
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- Min Suk Oh
- Yonsei University Institute of Physics and Applied Physics, , Seoul 120-749, Republic of Korea
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- Wonjun Choi
- Yonsei University Institute of Physics and Applied Physics, , Seoul 120-749, Republic of Korea
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- Kimoon Lee
- Yonsei University Institute of Physics and Applied Physics, , Seoul 120-749, Republic of Korea
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- D. K. Hwang
- Yonsei University Institute of Physics and Applied Physics, , Seoul 120-749, Republic of Korea
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- Seongil Im
- Yonsei University Institute of Physics and Applied Physics, , Seoul 120-749, Republic of Korea
説明
<jats:p>We report on the fabrication of complementary inverters that have ZnO and pentacene as n-type and p-type channels on a polyethersulfone substrate operating under 7V. Patterned Al and AlOx thin film were deposited at room temperature on the plastic as a common gate electrode and dielectric, respectively. After initial gate instability between ZnO channel and AlOx dielectric was controlled, our n-type thin-film transistors (TFTs) displayed quite a similar drain current level to that of p-type TFTs. Our flexible complementary device showed much high voltage gain of ∼100 even under a bent condition (56mm radius of curvature). Our complementary inverter also demonstrates a promising dynamic behavior of ∼20ms.</jats:p>
収録刊行物
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- Applied Physics Letters
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Applied Physics Letters 93 (3), 2008-07-21
AIP Publishing
