Activation of Mg implanted in GaN by multicycle rapid thermal annealing
-
- T.J. Anderson
- Naval Research Laboratory Washington DC 20375 USA
-
- B.N. Feigelson
- Naval Research Laboratory Washington DC 20375 USA
-
- F.J. Kub
- Naval Research Laboratory Washington DC 20375 USA
-
- M.J. Tadjer
- Naval Research Laboratory Washington DC 20375 USA
-
- K.D. Hobart
- Naval Research Laboratory Washington DC 20375 USA
-
- M.A. Mastro
- Naval Research Laboratory Washington DC 20375 USA
-
- J.K. Hite
- Naval Research Laboratory Washington DC 20375 USA
-
- C.R. Eddy
- Naval Research Laboratory Washington DC 20375 USA
書誌事項
- 公開日
- 2014-01
- 権利情報
-
- http://onlinelibrary.wiley.com/termsAndConditions#vor
- DOI
-
- 10.1049/el.2013.3214
- 公開者
- Institution of Engineering and Technology (IET)
この論文をさがす
説明
<jats:p>A long‐standing goal of GaN device research has been the development of a reliable, well‐controlled process for p‐GaN formation by ion implantation. Results to date have indicated an activation of 1% or less using high‐temperature rapid thermal annealing (RTA) techniques and coimplantation. Although Mg is a relatively deep acceptor, this is still much less than the theoretically achievable value (8.2% based on the 160 meV acceptor level). A multicycle RTA process is presented that is capable of achieving up to 8% activation of the Mg‐implanted GaN. This approaches the theoretical value, and represents a significant step in GaN device research.</jats:p>
収録刊行物
-
- Electronics Letters
-
Electronics Letters 50 (3), 197-198, 2014-01
Institution of Engineering and Technology (IET)