High-Mobility Transistors Based on Single Crystals of Isotopically Substituted Rubrene-d28

Wei Xie, Kathryn A. McGarry, Feilong Liu, Yanfei Wu, P. Paul Ruden, Christopher J. Douglas, C. Daniel Frisbie

doi:10.1021/jp402250v

High-Mobility Transistors Based on Single Crystals of Isotopically Substituted Rubrene-d28

DOI Web Site 被引用文献7件

Wei Xie

Department of Chemical Engineering and Materials Science, ‡Department of Chemistry, and §Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, Minnesota 55455, United States
Kathryn A. McGarry

Department of Chemical Engineering and Materials Science, ‡Department of Chemistry, and §Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, Minnesota 55455, United States
Feilong Liu

Department of Chemical Engineering and Materials Science, ‡Department of Chemistry, and §Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, Minnesota 55455, United States
Yanfei Wu

Department of Chemical Engineering and Materials Science, ‡Department of Chemistry, and §Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, Minnesota 55455, United States
P. Paul Ruden

Department of Chemical Engineering and Materials Science, ‡Department of Chemistry, and §Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, Minnesota 55455, United States
Christopher J. Douglas

Department of Chemical Engineering and Materials Science, ‡Department of Chemistry, and §Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, Minnesota 55455, United States
C. Daniel Frisbie

Department of Chemical Engineering and Materials Science, ‡Department of Chemistry, and §Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, Minnesota 55455, United States