Unusual properties of the fundamental band gap of InN

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  • J. Wu
    Applied Science and Technology Graduate Group, University of California, Berkeley
  • W. Walukiewicz
    Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720
  • K. M. Yu
    Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720
  • J. W. Ager
    Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720
  • E. E. Haller
    Department of Materials Science and Engineering, University of California, Berkeley
  • Hai Lu
    Department of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14853
  • William J. Schaff
    Department of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14853
  • Yoshiki Saito
    Department of Photonics, Faculty of Science and Engineering, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577, Japan
  • Yasushi Nanishi
    Department of Photonics, Faculty of Science and Engineering, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577, Japan
  • United States. Department of Energy. Division of Materials Sciences.

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説明

<jats:p>The optical properties of wurtzite-structured InN grown on sapphire substrates by molecular-beam epitaxy have been characterized by optical absorption, photoluminescence, and photomodulated reflectance techniques. These three characterization techniques show an energy gap for InN between 0.7 and 0.8 eV, much lower than the commonly accepted value of 1.9 eV. The photoluminescence peak energy is found to be sensitive to the free-electron concentration of the sample. The peak energy exhibits very weak hydrostatic pressure dependence, and a small, anomalous blueshift with increasing temperature.</jats:p>

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