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DC characteristics of ALD-grown Al<sub>2</sub>O<sub>3</sub>/AlGaN/GaN MIS-HEMTs and HEMTs at 600 °C in air
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Journal
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- Semiconductor Science and Technology
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Semiconductor Science and Technology 31 (11), 115017-, 2016-10-13
IOP Publishing
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Details 詳細情報について
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- CRID
- 1360011145041752704
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- ISSN
- 13616641
- 02681242
- https://id.crossref.org/issn/02681242
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- Data Source
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- Crossref
