書誌事項
- 公開日
- 2002-03
- 権利情報
-
- https://ieeexplore.ieee.org/Xplorehelp/downloads/license-information/IEEE.html
- DOI
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- 10.1109/55.988811
- 公開者
- Institute of Electrical and Electronics Engineers (IEEE)
この論文をさがす
説明
A cutoff frequency (f/sub T/) of 11 GHz is realized in the hydrogen-terminated surface channel diamond metal-insulator-semiconductor field-effect transistor (MISFET) with 0.7 /spl mu/m gate length. This value is five times higher than that of 2 /spl mu/m gate metal-semiconductor (MES) FETs and the maximum value in diamond FETs at present. Utilizing CaF/sub 2/ as an insulator in the MIS structure, the gate-source capacitance is reduced to half that of the diamond MESFET because of the gate insulator capacitance being in series to the surface-channel capacitance. This FET also exhibits the highest f/sub max/ of 18 GHz and 15 dB of power gain at 2 GHz. The high-frequency equivalent circuits of diamond MISFET are deduced from the S-parameters obtained from RF measurement.
収録刊行物
-
- IEEE Electron Device Letters
-
IEEE Electron Device Letters 23 (3), 121-123, 2002-03
Institute of Electrical and Electronics Engineers (IEEE)
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詳細情報 詳細情報について
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- CRID
- 1360011145728014208
-
- NII論文ID
- 30019829985
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- ISSN
- 15580563
- 07413106
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- データソース種別
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