Visible and Near‐Infrared Imaging with Nonfullerene‐Based Photodetectors
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- Nicola Gasparini
- Institute of Materials for Electronics and Energy Technology (I‐MEET) Friedrich‐Alexander‐University Erlangen‐Nuremberg Martensstraße 7 91058 Erlangen Germany
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- Alberto Gregori
- Siemens Healthineers, Technology Center Guenther‐Scharowsky‐Str. 1 91058 Erlangen Germany
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- Michael Salvador
- KAUST Solar Center (KSC) King Abdullah University of Science and Technology (KAUST) Thuwal 23955‐6900 Saudi Arabia
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- Markus Biele
- Siemens Healthineers, Technology Center Guenther‐Scharowsky‐Str. 1 91058 Erlangen Germany
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- Andrew Wadsworth
- Department of Chemistry and Centre for Plastic Electronics Imperial College London London SW7 2AZ UK
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- Sandro Tedde
- Siemens Healthineers, Technology Center Guenther‐Scharowsky‐Str. 1 91058 Erlangen Germany
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- Derya Baran
- KAUST Solar Center (KSC) King Abdullah University of Science and Technology (KAUST) Thuwal 23955‐6900 Saudi Arabia
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- Iain McCulloch
- KAUST Solar Center (KSC) King Abdullah University of Science and Technology (KAUST) Thuwal 23955‐6900 Saudi Arabia
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- Christoph J. Brabec
- Institute of Materials for Electronics and Energy Technology (I‐MEET) Friedrich‐Alexander‐University Erlangen‐Nuremberg Martensstraße 7 91058 Erlangen Germany
説明
<jats:title>Abstract</jats:title><jats:p>The solution‐processed organic photodetectors underpin an emerging technology with inherent implications in the biological sensors and imaging displays. Conventional organic photodiodes, the core element of an organic photodetector, rely mainly on fullerene‐based acceptors, which in combination with high and middle bandgap donors, limit the spectral photosensitivity to the visible range. Even in the case of low bandgap polymers the oscillator strength and thus the extinction coefficient are usually limited in the NIR due to the nature of molecular orbital hybridization. Instead, it is showed that pairing prototypical poly(3‐hexylthiophene) (P3HT) with rhodanine‐benzothiadiazole‐coupled indacenodithiophene (IDTBR), a nonfullerene electron acceptor absorbing beyond 750 nm, as the photoactive material of a simple photodiode results in a highly efficient organic photodetector with a record responsivity of 0.42 A W<jats:sup>−1</jats:sup> and external quantum efficiency (EQE) of 69% in the NIR (755 nm). Nonfullerene‐based photodiodes are processed on amorphous silicon active matrix backplanes to realize large area flat panel photodetector imagers able to detect objects under visible and NIR light conditions with an exceptional combination of responsivity, dynamic response and image crosstalk.</jats:p>
収録刊行物
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- Advanced Materials Technologies
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Advanced Materials Technologies 3 (7), 2018-06-11
Wiley