Green electroluminescence from Er-doped GaN Schottky barrier diodes

DOI PDF 被引用文献7件
  • A. J. Steckl
    Nanoelectronics Laboratory, University of Cincinnati, Cincinnati, Ohio 45221-0030
  • M. Garter
    Nanoelectronics Laboratory, University of Cincinnati, Cincinnati, Ohio 45221-0030
  • R. Birkhahn
    Nanoelectronics Laboratory, University of Cincinnati, Cincinnati, Ohio 45221-0030
  • J. Scofield
    Nanoelectronics Laboratory, University of Cincinnati, Cincinnati, Ohio 45221-0030

書誌事項

公開日
1998-10-26
DOI
  • 10.1063/1.122478
公開者
AIP Publishing

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説明

<jats:p>Visible light electroluminescence (EL) has been obtained from Er-doped GaN Schottky barrier diodes. The GaN was grown by molecular beam epitaxy on Si substrates using solid sources (for Ga, and Er) and a plasma source for N2. Al was utilized for both the Schottky (small-area) and ground (large-area) electrodes. Strong green light emission was observed under reverse bias, with weaker emission present under forward bias. The emission spectrum consists of two narrow green lines at 537 and 558 nm and minor peaks at 413 and at 666/672 nm. The green emission lines have been identified as Er transitions from the H11/22 and S3/24 levels to the I15/24 ground state and the blue and red peaks as the H9/22 and F9/24 Er transitions to the same ground state. The reverse bias EL intensity was found to increase linearly with bias current.</jats:p>

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