Red-Emitting Semiconductor Quantum Dot Lasers

DOI Web Site 9 Citations
  • S. Fafard
    Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, Ontario, Canada K1A 0R6.
  • K. Hinzer
    Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, Ontario, Canada K1A 0R6.
  • S. Raymond
    Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, Ontario, Canada K1A 0R6.
  • M. Dion
    Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, Ontario, Canada K1A 0R6.
  • J. McCaffrey
    Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, Ontario, Canada K1A 0R6.
  • Y. Feng
    Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, Ontario, Canada K1A 0R6.
  • S. Charbonneau
    Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, Ontario, Canada K1A 0R6.

Abstract

<jats:p>Visible-stimulated emission in a semiconductor quantum dot (QD) laser structure has been demonstrated. Red-emitting, self-assembled QDs of highly strained InAlAs have been grown by molecular beam epitaxy on a GaAs substrate. Carriers injected electrically from the doped regions of a separate confinement heterostructure thermalized efficiently into the zero-dimensional QD states, and stimulated emission at ∼707 nanometers was observed at 77 kelvin with a threshold current of 175 milliamperes for a 60-micrometer by 400-micrometer broad area laser. An external efficiency of ∼8.5 percent at low temperature and a peak power greater than 200 milliwatts demonstrate the good size distribution and high gain in these high-quality QDs.</jats:p>

Journal

  • Science

    Science 274 (5291), 1350-1353, 1996-11-22

    American Association for the Advancement of Science (AAAS)

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