High-Detectivity Polymer Photodetectors with Spectral Response from 300 nm to 1450 nm

  • Xiong Gong
    Center of Polymers and Organic Solids, University of California, Santa Barbara, CA 93106, USA.
  • Minghong Tong
    Center of Polymers and Organic Solids, University of California, Santa Barbara, CA 93106, USA.
  • Yangjun Xia
    Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou 510640, P. R. China.
  • Wanzhu Cai
    Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou 510640, P. R. China.
  • Ji Sun Moon
    Center of Polymers and Organic Solids, University of California, Santa Barbara, CA 93106, USA.
  • Yong Cao
    Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou 510640, P. R. China.
  • Gang Yu
    CBrite Inc., Goleta, CA 93117, USA.
  • Chan-Long Shieh
    CBrite Inc., Goleta, CA 93117, USA.
  • Boo Nilsson
    CBrite Inc., Goleta, CA 93117, USA.
  • Alan J. Heeger
    Center of Polymers and Organic Solids, University of California, Santa Barbara, CA 93106, USA.

説明

<jats:title>Polymer Photodetectors</jats:title> <jats:p> Optical sensing is used in a wide range of applications, such as low-light detection systems in cars and cameras. Most photodetectors have a limited spectral range and can only detect a narrow range of wavelengths. <jats:bold> Gong <jats:italic>et al.</jats:italic> </jats:bold> (p. <jats:related-article xmlns:xlink="http://www.w3.org/1999/xlink" ext-link-type="doi" page="1665" related-article-type="in-this-issue" vol="325" xlink:href="10.1126/science.1176706">1665</jats:related-article> , published online 13 August) developed polymer photodetectors with extremely broad spectral response and exceptionally high sensitivity that can exceed the response of an inorganic semiconductor detector at liquid helium temperature. A key aspect in the device design is the inclusion of blocking layers to reduce significantly the dark current or noise in the devices. </jats:p>

収録刊行物

  • Science

    Science 325 (5948), 1665-1667, 2009-09-25

    American Association for the Advancement of Science (AAAS)

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