Recent Progress on Localized Field Enhanced Two‐dimensional Material Photodetectors from Ultraviolet—Visible to Infrared
-
- Jianlu Wang
- National Laboratory for Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences 500 Yutian Road Shanghai 200083 China
-
- Hehai Fang
- National Laboratory for Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences 500 Yutian Road Shanghai 200083 China
-
- Xudong Wang
- National Laboratory for Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences 500 Yutian Road Shanghai 200083 China
-
- Xiaoshuang Chen
- National Laboratory for Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences 500 Yutian Road Shanghai 200083 China
-
- Wei Lu
- National Laboratory for Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences 500 Yutian Road Shanghai 200083 China
-
- Weida Hu
- National Laboratory for Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences 500 Yutian Road Shanghai 200083 China
説明
<jats:p>Two‐dimensional (2D) materials have drawn tremendous attention in recent years. Being atomically thin, stacked with van der Waals force and free of surface chemical dangling bonds, 2D materials exhibit several distinct physical properties. To date, 2D materials include graphene, transition metal dichalcogenides (TMDS), black phosphorus, black P<jats:sub>(1‐</jats:sub><jats:italic><jats:sub>x</jats:sub></jats:italic><jats:sub>)</jats:sub>As<jats:italic><jats:sub>x</jats:sub></jats:italic>, boron nitride (BN) and so forth. Owing to their various bandgaps, 2D materials have been utilized for photonics and optoelectronics. Photodetectors based on 2D materials with different structures and detection mechanisms have been established and present excellent performance. In this Review, localized field enhanced 2D material photodetectors (2DPDs) are introduced with sensitivity over the spectrum from ultraviolet, visible to infrared in the sight of the influence of device structure on photodetector performance instead of directly illustrating the detection mechanisms. Six types of localized fields are summarized. They are: ferroelectric field, photogating electric field, floating gate induced electrostatic field, interlayer built‐in field, localized optical field, and photo‐induced temperature gradient field, respectively. These localized fields are proved to effectively promote the detection ability of 2DPDs by suppressing background noise, enhancing optical absorption, improving electron‐hole separation efficiency, amplifying photoelectric gain and/or extending the detection range.</jats:p>
収録刊行物
-
- Small
-
Small 13 (35), 2017-06-08
Wiley
