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- Hongtao Lin
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
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- Zhengqian Luo
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
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- Tian Gu
- Materials Processing Center, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
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- Lionel C. Kimerling
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
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- Kazumi Wada
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
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- Anu Agarwal
- Materials Processing Center, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
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- Juejun Hu
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
説明
<jats:title>Abstract</jats:title><jats:p>The emergence of silicon photonics over the past two decades has established silicon as a preferred substrate platform for photonic integration. While most silicon-based photonic components have so far been realized in the near-infrared (near-IR) telecommunication bands, the mid-infrared (mid-IR, 2–20-μm wavelength) band presents a significant growth opportunity for integrated photonics. In this review, we offer our perspective on the burgeoning field of mid-IR integrated photonics on silicon. A comprehensive survey on the state-of-the-art of key photonic devices such as waveguides, light sources, modulators, and detectors is presented. Furthermore, on-chip spectroscopic chemical sensing is quantitatively analyzed as an example of mid-IR photonic system integration based on these basic building blocks, and the constituent component choices are discussed and contrasted in the context of system performance and integration technologies.</jats:p>
収録刊行物
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- Nanophotonics
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Nanophotonics 7 (2), 393-420, 2017-12-04
Walter de Gruyter GmbH
