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- S. A. Wolf
- Defense Advanced Research Projects Agency (DARPA), 3701 North Fairfax Drive, Arlington, VA 22203, USA.
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- D. D. Awschalom
- University of California, Department of Physics, Santa Barbara, CA 93106, USA.
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- R. A. Buhrman
- Cornell University, Applied and Engineering Physics, 211 Clark Hall, Ithaca, NY 14853, USA.
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- J. M. Daughton
- NVE, 11409 Valley View Road, Eden Prairie, MN 55344, USA.
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- S. von Molnár
- Florida State University, MARTECH, 406 Keen Building, Tallahassee, FL 32306, USA.
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- M. L. Roukes
- California Institute of Technology, Department of Physics, MS-114-36, Pasadena, CA 91125, USA.
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- A. Y. Chtchelkanova
- Strategic Analysis, 3601 Wilson Boulevard, Suite 500, Arlington, VA 22201, USA.
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- D. M. Treger
- Strategic Analysis, 3601 Wilson Boulevard, Suite 500, Arlington, VA 22201, USA.
書誌事項
- 公開日
- 2001-11-16
- DOI
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- 10.1126/science.1065389
- 公開者
- American Association for the Advancement of Science (AAAS)
この論文をさがす
説明
<jats:p>This review describes a new paradigm of electronics based on the spin degree of freedom of the electron. Either adding the spin degree of freedom to conventional charge-based electronic devices or using the spin alone has the potential advantages of nonvolatility, increased data processing speed, decreased electric power consumption, and increased integration densities compared with conventional semiconductor devices. To successfully incorporate spins into existing semiconductor technology, one has to resolve technical issues such as efficient injection, transport, control and manipulation, and detection of spin polarization as well as spin-polarized currents. Recent advances in new materials engineering hold the promise of realizing spintronic devices in the near future. We review the current state of the spin-based devices, efforts in new materials fabrication, issues in spin transport, and optical spin manipulation.</jats:p>
収録刊行物
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- Science
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Science 294 (5546), 1488-1495, 2001-11-16
American Association for the Advancement of Science (AAAS)