Vapour-phase siliconizing of iron plate and crystal growth of FeSi2 using Si2Cl6 as a source of silicon
書誌事項
- 公開日
- 1987-11
- 権利情報
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- https://www.elsevier.com/tdm/userlicense/1.0/
- DOI
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- 10.1016/0022-0248(87)90458-1
- 公開者
- Elsevier BV
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説明
Abstract An iron plate was siliconized using hexachlorodisilane in the temperature range of 500–1100° C, and its oxidation and corrosion stability were examined. Using hexachlorodisilane, the siliconizing temperature could be lowered by 200° C compared with that using tetrachlorosilane. The oxidation resistance and corrosion stability against dilute acid solutions were improved considerably by the siliconizing of the surface. Iron disilicide crystals with very interesting morphologies were grown regularly on the back side of the siliconized iron plate at 1100 ° C.
収録刊行物
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- Journal of Crystal Growth
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Journal of Crystal Growth 85 (3), 309-317, 1987-11
Elsevier BV