Ambipolar inverters using SnO thin-film transistors with balanced electron and hole mobilities

DOI PDF 3 Citations
  • Ling Yan Liang
    Division of Functional Materials and Nano Devices, Ningbo Institute of Materials Technology and Engineering (NIMTE), Chinese Academy of Sciences (CAS) 1 , Ningbo 315201, People’s Republic of China
  • Hong Tao Cao
    Division of Functional Materials and Nano Devices, Ningbo Institute of Materials Technology and Engineering (NIMTE), Chinese Academy of Sciences (CAS) 1 , Ningbo 315201, People’s Republic of China
  • Xiao Bo Chen
    Division of Functional Materials and Nano Devices, Ningbo Institute of Materials Technology and Engineering (NIMTE), Chinese Academy of Sciences (CAS) 1 , Ningbo 315201, People’s Republic of China
  • Zhi Min Liu
    Division of Functional Materials and Nano Devices, Ningbo Institute of Materials Technology and Engineering (NIMTE), Chinese Academy of Sciences (CAS) 1 , Ningbo 315201, People’s Republic of China
  • Fei Zhuge
    Division of Functional Materials and Nano Devices, Ningbo Institute of Materials Technology and Engineering (NIMTE), Chinese Academy of Sciences (CAS) 1 , Ningbo 315201, People’s Republic of China
  • Hao Luo
    Division of Functional Materials and Nano Devices, Ningbo Institute of Materials Technology and Engineering (NIMTE), Chinese Academy of Sciences (CAS) 1 , Ningbo 315201, People’s Republic of China
  • Jun Li
    Division of Functional Materials and Nano Devices, Ningbo Institute of Materials Technology and Engineering (NIMTE), Chinese Academy of Sciences (CAS) 1 , Ningbo 315201, People’s Republic of China
  • Yi Cheng Lu
    Department of Electrical and Computer Engineering, Rutgers University 2 , Piscataway, New Jersey 08854, USA
  • Wei Lu
    Department of Electrical Engineering and Computer Science, University of Michigan 3 , Michigan 48109, USA

Description

<jats:p>Ambipolar thin film transistors have attracted increasing research interests due to their promising applications in complementary logic circuits and the dissipative charge transporting devices. Here, we report the fabrication of an ambipolar transistor using tin mono-oxide (SnO) as a channel, which possesses balanced electron and hole field-effect mobilities. A complementary metal oxide semiconductor-like inverter using the SnO dual operation transistors is demonstrated with a maximum gain up to 30 and long-term air stability. Such logic device configuration would simplify the circuit design and fabrication process, offering more opportunities for designing and constructing oxide-based logic circuits.</jats:p>

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