Nanoelectromechanical Logic and Memory Devices
Description
<jats:p>Electromechanical relays exhibit inherently zero leakage and sharp hysteresis, which are compelling for logic and memory applications. We present an overview of the nano-scale electromechanical logic and memory devices, investigate their performance, and make a comparison with state-of-the-art logic and memory technologies. We show that nanoelectromechanical logic relays and memory cells can provide significant benefit in terms of operating voltage and energy dissipation -beyond the capability of current technologies- if the technological challenges related to surface adhesion and contact reliability can be overcome.</jats:p>
Journal
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- ECS Transactions
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ECS Transactions 19 (1), 49-59, 2009-05-15
The Electrochemical Society
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Keywords
Details 詳細情報について
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- CRID
- 1360011146558630400
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- ISSN
- 19386737
- 19385862
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- Data Source
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- Crossref