New Approaches for Dry Etching Metal Oxides at low Temperature and High Rates

DOI Web Site 1 Citations

Description

<jats:title>ABSTRACT</jats:title><jats:p>The reactions of metal oxides including CuO, ZnO, V<jats:sub>2</jats:sub>O<jats:sub>5</jats:sub>, and PbO with 1,1,1,5,5,5-hexaflouro- 2,4-pentanedione (hfacH) were investigated. A hot-wall reactor was used to react hfacH with metal oxide powders to form sufficient quantities of volatile reaction products for characterization by Infrared Spectroscopy (IR), Elemental Analysis (EA), Nuclear Magnetic Resonance (NMR), Mass Spectroscopy (MS), Thermogravimetric Analysis and Differential Thermal Analysis (DTA). PbO, ZnO and CuO powders reacted rapidly at 200 °C to form the corresponding metal β-diketonates and V<jats:sub>2</jats:sub>O<jats:sub>5</jats:sub> reacted to give OV(hfac)<jats:sub>2</jats:sub>. A differential cold-wall reactor was to used to measure etch rates of CuO<jats:sub>x</jats:sub> films as a function of temperature and hfacH partial pressure. AES and XPS analysis of the laser ablation deposited CuO<jats:sub>x</jats:sub> film annealed in an O<jats:sub>2</jats:sub> atmosphere revealed that the film was composed of CuO and Cu<jats:sub>2</jats:sub>O. Etch rates of up to a I l.βm/min at hfacH partial pressure of 1 Torr at 270 °C were obtained. Laser induced etching of the same CuO<jats:sub>x</jats:sub> film with hfacH showed evidence of copper oxide removal.</jats:p>

Journal

  • MRS Proceedings

    MRS Proceedings 268 1992

    Springer Science and Business Media LLC

Citations (1)*help

See more

Details 詳細情報について

Report a problem

Back to top