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- Yuya Murai
- Department of Chemistry, Nagoya University, Nagoya, Aichi 464-8602, Japan
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- Shaochun Zhang
- Department of Chemistry, Nagoya University, Nagoya, Aichi 464-8602, Japan
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- Takato Hotta
- Department of Chemistry, Nagoya University, Nagoya, Aichi 464-8602, Japan
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- Zheng Liu
- Innovative Functional Materials Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Nagoya, Aichi 463-8560, Japan
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- Takahiko Endo
- Department of Physics, Tokyo Metropolitan University, Hachioji, Tokyo 192-0397, Japan
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- Hiroshi Shimizu
- Department of Physics, Tokyo Metropolitan University, Hachioji, Tokyo 192-0397, Japan
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- Yasumitsu Miyata
- Department of Physics, Tokyo Metropolitan University, Hachioji, Tokyo 192-0397, Japan
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- Toshifumi Irisawa
- Device Technology Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
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- Yanlin Gao
- Department of Physics, Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Tsukuba 305-8571, Japan
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- Mina Maruyama
- Department of Physics, Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Tsukuba 305-8571, Japan
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- Susumu Okada
- Department of Physics, Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Tsukuba 305-8571, Japan
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- Hiroyuki Mogi
- Faculty of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Tsukuba 305-8571, Japan
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- Tomohiro Sato
- Faculty of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Tsukuba 305-8571, Japan
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- Shoji Yoshida
- Faculty of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Tsukuba 305-8571, Japan
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- Hidemi Shigekawa
- Faculty of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Tsukuba 305-8571, Japan
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- Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
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- Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
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- Ruben Canton-Vitoria
- Department of Chemistry, Nagoya University, Nagoya, Aichi 464-8602, Japan
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- Ryo Kitaura
- Department of Chemistry, Nagoya University, Nagoya, Aichi 464-8602, Japan
説明
We have developed a simple and straightforward way to realize controlled postdoping toward 2D transition metal dichalcogenides (TMDs). The key idea is to use low-kinetic-energy dopant beams and a high-flux chalcogen beam simultaneously, leading to substitutional doping with controlled dopant densities. Atomic-resolution transmission electron microscopy has revealed that dopant atoms injected toward TMDs are incorporated substitutionally into the hexagonal framework of TMDs. The electronic properties of doped TMDs (Nb-doped WSe
収録刊行物
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- ACS Nano
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ACS Nano 15 (12), 19225-19232, 2021-11-29
American Chemical Society (ACS)
- Tweet
キーワード
- doped tmds
- Physiology
- patterned mask
- Plant Biology
- selective doping
- Biochemistry
- 2 orders
- hexagonal framework
- doped wse
- magnitude increase
- Cancer
- straightforward way
- dimensional semiconductors
- energy dopant beams
- postdoping toward tmds
- doping toward two
- versatile post
- Infectious Diseases
- key idea
- generation electronics
- use low
- controlled dopant densities
- Medicine
- type action
- incorporated substitutionally
- versatile tool
- Biotechnology
- Chemical Sciences not elsewhere classified
- substitutional doping
- Immunology
- Information Systems not elsewhere classified
- Biophysics
- 535
- postdoping method developed
- shown drastic change
- Genetics
- based next
- p -</
- tmds )
- Computational Biology
- electronic properties
- Physical Sciences not elsewhere classified
- Developmental Biology
詳細情報 詳細情報について
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- CRID
- 1360013168739703808
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- ISSN
- 1936086X
- 19360851
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- PubMed
- 34843228
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- データソース種別
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- Crossref
- KAKEN
- OpenAIRE
