Electronic structure of <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msup><mml:mn>3</mml:mn><mml:mo>∘</mml:mo></mml:msup></mml:math> -twisted bilayer graphene on 4H-SiC(0001)

DOI Web Site Web Site 参考文献35件

書誌事項

公開日
2021-05-13
資源種別
journal article
権利情報
  • https://link.aps.org/licenses/aps-default-license
DOI
  • 10.1103/physrevmaterials.5.l051001
公開者
American Physical Society (APS)

説明

Interesting electronic properties of a-few-degree-twisted bilayer graphene are caused by the formation of a flat band due to the interlayer interaction and electronic correlation. The authors quantitatively investigated the band structure of wide 3${}^{\mathrm{deg}}$-twisted bilayer graphene with clean interface by angle-resolved photoelectron spectroscopy, and compare the results with those of a band calculation using a recently-developed band unfolding method. The observed band structure indicates strong interlayer coupling that renormalizes the band structure including partial flat band features and gap formation. The observed band structure is in good agreement with the calculated results, indicating the importance of the interlayer coupling for the band renormalization.

収録刊行物

参考文献 (35)*注記

もっと見る

関連プロジェクト

もっと見る

詳細情報 詳細情報について

問題の指摘

ページトップへ