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- Bhagwati Prasad
- Department of Materials Science and Engineering University of California Berkeley CA 94720 USA
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- Yen‐Lin Huang
- Department of Materials Science and Engineering University of California Berkeley CA 94720 USA
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- Rajesh V. Chopdekar
- Advanced Light Source Lawrence Berkeley National Laboratory Berkeley CA 94720 USA
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- Zuhuang Chen
- Department of Materials Science and Engineering University of California Berkeley CA 94720 USA
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- James Steffes
- Institute of Materials Science University of Connecticut Storrs CT 06269 USA
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- Sujit Das
- Department of Materials Science and Engineering University of California Berkeley CA 94720 USA
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- Qian Li
- Department of Physics University of California Berkeley CA 94720 USA
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- Mengmeng Yang
- Department of Physics University of California Berkeley CA 94720 USA
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- Chia‐Ching Lin
- Exploratory Integrated Circuits Components Research Intel Corp. Hillsboro OR 97124 USA
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- Tanay Gosavi
- Exploratory Integrated Circuits Components Research Intel Corp. Hillsboro OR 97124 USA
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- Dmitri E. Nikonov
- Exploratory Integrated Circuits Components Research Intel Corp. Hillsboro OR 97124 USA
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- Zi Qiang Qiu
- Department of Physics University of California Berkeley CA 94720 USA
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- Lane W. Martin
- Department of Materials Science and Engineering University of California Berkeley CA 94720 USA
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- Bryan D Huey
- Institute of Materials Science University of Connecticut Storrs CT 06269 USA
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- Ian Young
- Exploratory Integrated Circuits Components Research Intel Corp. Hillsboro OR 97124 USA
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- Jorge Íñiguez
- Materials Research and Technology Department Luxembourg Institute of Science and Technology (LIST) Avenue des Hauts‐Fourneaux 5 Esch‐sur‐Alzette L‐4362 Luxemburg
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- Sasikanth Manipatruni
- Exploratory Integrated Circuits Components Research Intel Corp. Hillsboro OR 97124 USA
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- Ramamoorthy Ramesh
- Department of Materials Science and Engineering University of California Berkeley CA 94720 USA
抄録
<jats:title>Abstract</jats:title><jats:p>Spintronic elements based on spin transfer torque have emerged with potential for on‐chip memory, but they suffer from large energy dissipation due to the large current densities required. In contrast, an electric‐field‐driven magneto‐electric storage element can operate with capacitive displacement charge and potentially reach 1–10 µJ cm<jats:sup>−2</jats:sup> switching operation. Here, magneto‐electric switching of a magnetoresistive element is shown, operating at or below 200 mV, with a pathway to get down to 100 mV. A combination of phase detuning is utilized via isovalent La substitution and thickness scaling in multiferroic BiFeO<jats:sub>3</jats:sub> to scale the switching energy density to ≈10 µJ cm<jats:sup>−2</jats:sup>. This work provides a template to achieve attojoule‐class nonvolatile memories.</jats:p>
収録刊行物
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- Advanced Materials
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Advanced Materials 32 (28), 2001943-, 2020-05-28
Wiley