Ultralow Voltage Manipulation of Ferromagnetism

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  • Bhagwati Prasad
    Department of Materials Science and Engineering University of California Berkeley CA 94720 USA
  • Yen‐Lin Huang
    Department of Materials Science and Engineering University of California Berkeley CA 94720 USA
  • Rajesh V. Chopdekar
    Advanced Light Source Lawrence Berkeley National Laboratory Berkeley CA 94720 USA
  • Zuhuang Chen
    Department of Materials Science and Engineering University of California Berkeley CA 94720 USA
  • James Steffes
    Institute of Materials Science University of Connecticut Storrs CT 06269 USA
  • Sujit Das
    Department of Materials Science and Engineering University of California Berkeley CA 94720 USA
  • Qian Li
    Department of Physics University of California Berkeley CA 94720 USA
  • Mengmeng Yang
    Department of Physics University of California Berkeley CA 94720 USA
  • Chia‐Ching Lin
    Exploratory Integrated Circuits Components Research Intel Corp. Hillsboro OR 97124 USA
  • Tanay Gosavi
    Exploratory Integrated Circuits Components Research Intel Corp. Hillsboro OR 97124 USA
  • Dmitri E. Nikonov
    Exploratory Integrated Circuits Components Research Intel Corp. Hillsboro OR 97124 USA
  • Zi Qiang Qiu
    Department of Physics University of California Berkeley CA 94720 USA
  • Lane W. Martin
    Department of Materials Science and Engineering University of California Berkeley CA 94720 USA
  • Bryan D Huey
    Institute of Materials Science University of Connecticut Storrs CT 06269 USA
  • Ian Young
    Exploratory Integrated Circuits Components Research Intel Corp. Hillsboro OR 97124 USA
  • Jorge Íñiguez
    Materials Research and Technology Department Luxembourg Institute of Science and Technology (LIST) Avenue des Hauts‐Fourneaux 5 Esch‐sur‐Alzette L‐4362 Luxemburg
  • Sasikanth Manipatruni
    Exploratory Integrated Circuits Components Research Intel Corp. Hillsboro OR 97124 USA
  • Ramamoorthy Ramesh
    Department of Materials Science and Engineering University of California Berkeley CA 94720 USA

Abstract

<jats:title>Abstract</jats:title><jats:p>Spintronic elements based on spin transfer torque have emerged with potential for on‐chip memory, but they suffer from large energy dissipation due to the large current densities required. In contrast, an electric‐field‐driven magneto‐electric storage element can operate with capacitive displacement charge and potentially reach 1–10 µJ cm<jats:sup>−2</jats:sup> switching operation. Here, magneto‐electric switching of a magnetoresistive element is shown, operating at or below 200 mV, with a pathway to get down to 100 mV. A combination of phase detuning is utilized via isovalent La substitution and thickness scaling in multiferroic BiFeO<jats:sub>3</jats:sub> to scale the switching energy density to ≈10 µJ cm<jats:sup>−2</jats:sup>. This work provides a template to achieve attojoule‐class nonvolatile memories.</jats:p>

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