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- I. S. Makhov
- Institute of Physics, Nanotechnology and Telecommunications, Peter the Great St. Petersburg Polytechnic University 1 , 195251 St. Petersburg, Russia
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- V. Yu. Panevin
- Institute of Physics, Nanotechnology and Telecommunications, Peter the Great St. Petersburg Polytechnic University 1 , 195251 St. Petersburg, Russia
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- D. A. Firsov
- Institute of Physics, Nanotechnology and Telecommunications, Peter the Great St. Petersburg Polytechnic University 1 , 195251 St. Petersburg, Russia
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- L. E. Vorobjev
- Institute of Physics, Nanotechnology and Telecommunications, Peter the Great St. Petersburg Polytechnic University 1 , 195251 St. Petersburg, Russia
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- G. V. Klimko
- Ioffe Institute 2 , 194021 St. Petersburg, Russia
説明
<jats:p>The terahertz radiation in GaAs/AlGaAs quantum wells with different types of doping was experimentally studied under interband optical excitation of nonequilibrium charge carriers. The structures doped only with donors, and the structures with a high degree of compensation of donors by acceptors were studied. The spectra of terahertz radiation associated with charge carrier transitions with the participation of shallow impurity states were obtained and analyzed. It was shown that the compensation of donors by acceptors leads to a significant increase in the intensity of terahertz photoluminescence. The spectra of near-infrared photoluminescence with the participation of donor and acceptor states were also studied and analyzed.</jats:p>
収録刊行物
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- Journal of Applied Physics
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Journal of Applied Physics 126 (17), 2019-11-06
AIP Publishing