Liquid-phase epitaxial growth of lattice-matched InGaAsP on (100)-InP for the 1.15–1.31-μm spectral region

M. Feng, T. H. Windhorn, M. M. Tashima, G. E. Stillman

doi:10.1063/1.89920

Liquid-phase epitaxial growth of lattice-matched InGaAsP on (100)-InP for the 1.15–1.31-μm spectral region

DOI PDF 被引用文献2件

M. Feng

Department of Electrical Engineering and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
T. H. Windhorn

Department of Electrical Engineering and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
M. M. Tashima

Department of Electrical Engineering and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
G. E. Stillman

Department of Electrical Engineering and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801

説明

<jats:p>The distribution coefficients for the growth of lattice-matched InGaAsP on (100) -InP substrates in the 1.15–1.31-μm spectral range have been determined. These results have been used in the growth of heterojunction photodiodes with quantum efficiencies ⩾48% at 1.27 μm.</jats:p>