Ferroelectric properties of Bi2VO5.5 thin films on LaAlO3 and SiO2/Si substrates with LaNiO3 base electrode

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  • K. M. Satyalakshmi
    Department of Metallurgy, Indian Institute of Science, Bangalore 560 012, India
  • K. B. R. Varma
    Materials Research Centre, Indian Institute of Science, Bangalore 560 012, India
  • M. S. Hegde
    Solid State and Structural Chemistry Unit, Indian Institute of Science, Bangalore 560 012, India

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<jats:p>Ferroelectric bismuth vanadate Bi2VO5.5 (BVO) thin films have been grown on LaAlO3 (LAO) and SiO2/Si substrates with LaNiO3 (LNO) base electrodes by the pulsed laser deposition technique. The effect of substrate temperature on the ferroelectric properties of BVO thin films, has been studied by depositing the thin films at different temperatures. The BVO thin films grown on LNO/LAO were textured whereas the thin films grown on LNO/SiO2/Si were polycrystalline. The BVO thin films grown at 450 °C exhibited good ferroelectric properties indicating that LNO acts as a good electrode material. The remanent polarization Pr and coercive field Ec obtained for the BVO thin films grown at 450 °C on LNO/LAO and LNO/SiO2/Si were 2.5 μC/cm2, 37 kV/cm and 4.6μC/cm2, 93 kV/cm, respectively.</jats:p>

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