Etch-stop characteristics of Sc2O3 and HfO2 films for multilayer dielectric grating applications

DOI PDF 被引用文献1件
  • J. A. Britten
    Lawrence Livermore National Laboratory, Livermore, California 94550
  • H. T. Nguyen
    Lawrence Livermore National Laboratory, Livermore, California 94550
  • S. F. Falabella
    Lawrence Livermore National Laboratory, Livermore, California 94550
  • B. W. Shore
    Lawrence Livermore National Laboratory, Livermore, California 94550
  • M. D. Perry
    Lawrence Livermore National Laboratory, Livermore, California 94550
  • D. H. Raguin
    Rochester Photonics Corp., Rochester, New York 14623

書誌事項

公開日
1996-09-01
DOI
  • 10.1116/1.580256
公開者
American Vacuum Society

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説明

<jats:p>High-efficiency, high laser-damage threshold reflection gratings can be made by etching a grating structure into the top layer of a multilayer high-reflectivity stack. Spatial efficiency and wave-front uniformity can be maximized by taking advantage of the etch-stop properties of the layer underneath the top layer to be etched. The etch-stop layer must have a high optical damage resistance, which places severe restrictions on available materials. The etch characteristics of HfO2 and Sc2O3, two materials commonly used in high laser-damage optical coatings, have been evaluated. The etch rate selectivities of e-beam evaporated SiO2/HfO2/Sc2O3 thin films in a reactive ion etching system optimized for SiO2 etching are approximately 100/10/1. Gratings etched to a HfO2 etch-stop layer suffered from deposition of fluorinated Hf compounds on the SiO2 grating sidewalls, but sidewalls were clean when Sc2O3 was used as the etch-stop layer.</jats:p>

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