New method to improve thermal stability in the interface of silicon and tungsten by the interposition of plasma deposited tungsten nitride thin film

DOI PDF 被引用文献2件
  • Chang Woo Lee
    Semiconductor Materials Laboratory, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul, Korea
  • Yong Tae Kim
    Semiconductor Materials Laboratory, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul, Korea
  • Jeong Yong Lee
    Semiconductor Materials Laboratory, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul, Korea

書誌事項

公開日
1994-01-31
DOI
  • 10.1063/1.111068
公開者
AIP Publishing

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説明

<jats:p>Thermally stable tungsten nitride/tungsten bilayer has been proposed for the application of metallization. This bilayer is sequentially formed by plasma enhanced chemical vapor deposition without breaking vacuum. The Rutherford backscattering spectrometry and cross-sectional transmission electron microscopy reveal that the interaction between the W and Si substrate can be prevented by interposing a 800-Å-thick W67N33 layer. The W67N33/W bilayer maintains the integrity of the interface during annealing at 850 °C for 30 min without the formation of Si2W and interdiffusion phenomena. Sheet resistivity of the W67N33/W bilayer is gradually decreased from 17 to 12 μΩ cm at annealing temperatures up to 850 °C.</jats:p>

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