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Marks for alignment and registration in projection electron lithography
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- R. C. Farrow
- AT&T Bell Laboratories, Murray Hill, New Jersey 07974
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- J. A. Liddle
- AT&T Bell Laboratories, Murray Hill, New Jersey 07974
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- S. D. Berger
- AT&T Bell Laboratories, Murray Hill, New Jersey 07974
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- H. A. Huggins
- AT&T Bell Laboratories, Murray Hill, New Jersey 07974
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- J. S. Kraus
- AT&T Bell Laboratories, Murray Hill, New Jersey 07974
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- R. M. Camarda
- AT&T Bell Laboratories, Murray Hill, New Jersey 07974
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- R. G. Tarascon
- AT&T Bell Laboratories, Murray Hill, New Jersey 07974
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- C. W. Jurgensen
- AT&T Bell Laboratories, Murray Hill, New Jersey 07974
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- R. R. Kola
- AT&T Bell Laboratories, Murray Hill, New Jersey 07974
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- L. Fetter
- AT&T Bell Laboratories, Murray Hill, New Jersey 07974
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Description
<jats:p>This article discusses the relevant criteria for selecting alignment marks for projection electron lithography. The mark material, topography, and pattern layout are considered. Results from experiments and calculations indicate that there is a wide range of acceptable mark configurations suitable for use with short beam dwell times. These results are based on analyses of the available backscattered electron signal and experimentally obtained detection accuracy within the nanometer range.</jats:p>
Journal
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- Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 11 (6), 2175-2178, 1993-11-01
American Vacuum Society
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Details 詳細情報について
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- CRID
- 1360016866476501888
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- NII Article ID
- 30020321797
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- DOI
- 10.1116/1.586451
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- ISSN
- 15208567
- 10711023
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- Data Source
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- Crossref
- CiNii Articles