Epitaxial growth of C60 crystals vapor-deposited on a KI (001) surface

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  • Hisao Yanagi
    Faculty of Engineering, Kobe University, Rokkodai, Nada-ku, Kobe 657, Japan
  • Shinjiro Doumi
    Faculty of Engineering, Kobe University, Rokkodai, Nada-ku, Kobe 657, Japan
  • Takashi Sasaki
    Faculty of Engineering, Kobe University, Rokkodai, Nada-ku, Kobe 657, Japan
  • Hirokazu Tada
    Kansai Advanced Research Center, Communications Research Laboratory, 588-2 Iwaoka, Nishi-ku, Kobe 651-24, Japan

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<jats:p>Epitaxial growth of C60 was found in vapor-deposited crystals on the KI (001) cleavage surface. C60 molecules deposited on the KI surface, which was preheated at 400 °C, then kept at 195 °C during deposition, crystallized in the face-centered cubic form with two types of morphologies. Truncated pyramidal crystals epitaxially grew along the KI 〈110〉 directions, taking its C60 (001) face parallel to the KI (001) surface. This epitaxial nucleation occurred at a corner of the crossing steps along the KI 〈100〉 directions which were caused by thermal etching of the KI surface. Molecular mechanics and dynamics calculations revealed that a three-dimensional (2×2) commensurate lattice matching between the C60 {100} planes and the KI {100} faces at the step corner attributed to the epitaxial nucleation of the pyramidal crystal, in spite of the lower stability of the monolayer interaction of the C60 (001) face with the KI (001) surface. On the other hand, platelike crystals grew, with the C60 (111) face parallel to the KI (001) surface. A stable monolayer nucleation of the close-packed C60 (111) face made this two-dimensional growth of the platelike crystals possible to occur on the (001) terrace of the etched KI surface.</jats:p>

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