InP-Ga<i>x</i>In1−<i>x</i>As<i>y</i>P1−<i>y</i> double heterostructure for 1.5 μm wavelength

DOI PDF 被引用文献5件
  • Haruo Nagai
    Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation, Midori-cho, Musashino-shi, Tokyo, 180 Japan
  • Yoshio Noguchi
    Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation, Midori-cho, Musashino-shi, Tokyo, 180 Japan

書誌事項

公開日
1978-02-15
DOI
  • 10.1063/1.90002
公開者
AIP Publishing

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説明

<jats:p>InP/GaxIn1−xAsyP1−y/GaxIn1 −x AsyP1−y double-heterostructure LED’s in a 1.5-μm-wavelength region have been fabricated by the LPE method. The half-width value of the spectrum is about 1100 Å, and the external quantum efficiency is 1.5% for undoped active layers of Ga0.28In0.72As0.77P0.23. The threshold current density of the laser oscillation at 1.52 μm and 300 K is 104 A/cm2 μm. No symptom of an initial degradation has been observed.</jats:p>

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