Correlation between preparation variables and dielectric data of GaN formed by GaAs conversion
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説明
<jats:title>Abstract</jats:title><jats:p>Polycrystalline GaN samples were prepared by two‐stage conversion of monocrystalline GaAs. Dependence of material properties on temperature and duration of the nitriding treatment was studied mainly by means of dielectric data taken in the range 0.25… 110MHz. Existence of optimum nitriding temperature, reported by previous workers, was borne out, and an attempt was made at its explanation in the framework of a simple model.</jats:p>
収録刊行物
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- Kristall und Technik
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Kristall und Technik 12 (12), 1293-1302, 1977-01
Wiley