Exploration of velocity overshoot in a high-performance deep sub-0.1-μm SOI MOSFET with asymmetric channel profile
書誌事項
- 公開日
- 1999-10
- 権利情報
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- https://ieeexplore.ieee.org/Xplorehelp/downloads/license-information/IEEE.html
- DOI
-
- 10.1109/55.791935
- 公開者
- Institute of Electrical and Electronics Engineers (IEEE)
この論文をさがす
収録刊行物
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- IEEE Electron Device Letters
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IEEE Electron Device Letters 20 (10), 538-540, 1999-10
Institute of Electrical and Electronics Engineers (IEEE)