The two-dimensional nucleation and growth of anodic oxide films on layered semiconductors
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説明
Abstract We demonstrate in this paper that layered semiconductors present a very favorable situation for the study of nucleation and growth of anodic oxide films on them: we can easily prepare semiconductor surfaces clean enough to have the two-dimensional nucleation and growth take place and we can investigate the growing process of the anodic oxide films under periodic surface conditions which are of great use to obtain information on the transient behavior of the film growth and the thickness of the grown film. Main discussion and conclusion are as follows: (1) periodically varying structures in the cell voltage versus time ( V c − t ) and ellipsometric off-null signal versus time ( ΔI − t ) curves, observed in anodic oxidation process of layered semiconductors Bi 2 Te 3 under constant current condition, originate from the repetition of anodic oxidation of the monomolecular layer, and the unit lineshapes in the V c − t curves indicate the two-dimensional nucleation and growth. (2) In GaSe, a nonpassive film grows two-dimensionally in the initial stage of the anodic oxidation and transforms into a passive film in the final stage. (3) Transient behaviors in the V c − t or − d 2 V c d t 2 −t characteristics are observed and discussed in terms of the rate determining process.
収録刊行物
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- Surface Science
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Surface Science 86 46-53, 1979-07
Elsevier BV
