GaInAs(P)/InP quantum well structures grown by gas source molecular beam epitaxy

H. Temkin, M. B. Panish, P. M. Petroff, R. A. Hamm, J. M. Vandenberg, S. Sumski

doi:10.1063/1.96178

GaInAs(P)/InP quantum well structures grown by gas source molecular beam epitaxy

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H. Temkin

AT&T Bell Laboratories, Murray Hill, New Jersey 07974
M. B. Panish

AT&T Bell Laboratories, Murray Hill, New Jersey 07974
P. M. Petroff

AT&T Bell Laboratories, Murray Hill, New Jersey 07974
R. A. Hamm

AT&T Bell Laboratories, Murray Hill, New Jersey 07974
J. M. Vandenberg

AT&T Bell Laboratories, Murray Hill, New Jersey 07974
S. Sumski

AT&T Bell Laboratories, Murray Hill, New Jersey 07974

抄録

<jats:p>We describe optical properties of single and multiple quantum well structures grown by gas source molecular beam epitaxy. Absorption and photoluminescence were used in conjunction with x-ray and transmission electron microscopy techniques to determine the confined particle energy levels and well thicknesses. Well defined exciton transitions were observed in the ternary and quaternary well superlattices even above room temperature. In single well structures energy shifts as large as 260 and 370 meV were observed for GaInAs and GaInAsP wells, respectively. On the basis of these results we estimated that over 50% of the InGaAs/InP band discontinuity resides in the conduction band.</jats:p>