Iron doped bulk semi-insulating GaAs

DOI PDF 被引用文献1件
  • M. L. Gray
    AT&T Bell Laboratories, 2525 North 12th Street, Reading, Pennsylvania 19612-3566
  • L. Peterson
    SEH America, Inc., 4111 NE 112 Avenue, Vancouver, Washington 98682-6776
  • R-S. Tang
    Department of Physics & Astronomy, Western Washington University, Bellingham, Washington 98225-9064
  • S. B. Saban
    Department of Physics & Astronomy, Western Washington University, Bellingham, Washington 98225-9064
  • J. S. Blakemore
    Department of Physics & Astronomy, Western Washington University, Bellingham, Washington 98225-9064

書誌事項

公開日
1993-04-01
DOI
  • 10.1063/1.352981
公開者
AIP Publishing

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説明

<jats:p>As an acceptor dopant with a solid:liquid distribution coefficient ks&lt;1, iron is an example of an impurity which can be used in modest amounts to ensure that an adequate fraction of EL2 midgap defects are ionized along the length of a melt-grown GaAs crystal, as desired for semi-insulating behavior. The results of such deliberate doping with iron (when NFe is in the mid-1015 cm−3 range) are reported for crystals grown by both the liquid encapsulated Czochralski and the vertical gradient freeze methods. Except in the very tail region of such crystals (when NFe≳NEL2 and high resistivity p-type behavior results), GaAs with this modest iron modification to the compensation balance behaves with quite ordinary semi-insulating properties. The iron acceptors are then all ionized, and are optically ‘‘invisible.’’</jats:p>

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