Selective deposition of diamond crystals by chemical vapor deposition using a tungsten-filament method

DOI PDF 被引用文献5件
  • K. Hirabayashi
    Production Engineering Research Center, Canon Inc., 3-30-2 Shimomaruko, Ohta-ku, Tokyo 146, Japan
  • Y. Taniguchi
    Production Engineering Research Center, Canon Inc., 3-30-2 Shimomaruko, Ohta-ku, Tokyo 146, Japan
  • O. Takamatsu
    Research Center, Canon Inc., Morinosato, Atsugi-shi, Kanagawa 243-01, Japan
  • T. Ikeda
    Research Center, Canon Inc., Morinosato, Atsugi-shi, Kanagawa 243-01, Japan
  • K. Ikoma
    Research Center, Canon Inc., Morinosato, Atsugi-shi, Kanagawa 243-01, Japan
  • N. Iwasaki-Kurihara
    Research Center, Canon Inc., Morinosato, Atsugi-shi, Kanagawa 243-01, Japan

書誌事項

公開日
1988-11-07
DOI
  • 10.1063/1.99789
公開者
AIP Publishing

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説明

<jats:p>Selective deposition of polycrystalline and single-crystal diamonds has been achieved on a silicon wafer by chemical vapor deposition from CH4 and H2 gases using a hot-filament method. The nucleation of diamonds occurs selectively at the sites fabricated by successive roughening and patterned etching of wafers.</jats:p>

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