High performance AlGaN/GaN HEMT with improved Ohmiccontacts

DOI Web Site 被引用文献2件
  • S.J. Cai
    Electrical Engineering Department, Device Research Laboratory, University of California at Los Angeles, Los Angeles, CA 90095-1594, USA
  • R. Li
    Electrical Engineering Department, Device Research Laboratory, University of California at Los Angeles, Los Angeles, CA 90095-1594, USA
  • Y.L. Chen
    Electrical Engineering Department, Device Research Laboratory, University of California at Los Angeles, Los Angeles, CA 90095-1594, USA
  • L. Wong
    Electrical Engineering Department, Device Research Laboratory, University of California at Los Angeles, Los Angeles, CA 90095-1594, USA
  • W.G. Wu
    Electrical Engineering Department, Device Research Laboratory, University of California at Los Angeles, Los Angeles, CA 90095-1594, USA
  • S.G. Thomas
    Electrical Engineering Department, Device Research Laboratory, University of California at Los Angeles, Los Angeles, CA 90095-1594, USA
  • K.L. Wang
    Electrical Engineering Department, Device Research Laboratory, University of California at Los Angeles, Los Angeles, CA 90095-1594, USA

書誌事項

公開日
1998-11-26
DOI
  • 10.1049/el:19981618
公開者
Institution of Engineering and Technology (IET)

この論文をさがす

収録刊行物

  • Electronics Letters

    Electronics Letters 34 (24), 2354-2356, 1998-11-26

    Institution of Engineering and Technology (IET)

被引用文献 (2)*注記

もっと見る

詳細情報 詳細情報について

問題の指摘

ページトップへ