Rapid thermal nitridation of SiO2 for nitroxide thin dielectrics

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書誌事項

公開日
1985-11-15
DOI
  • 10.1063/1.96347
公開者
AIP Publishing

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説明

<jats:p>Nitroxide thin films have been grown by rapid thermal nitridation of oxidized silicon in ammonia. The kinetics of formation of the surface and interface nitrogen-rich layers has been investigated and correlated to the electrical behavior of these films. It could be concluded that rapid thermal nitridation of ≊100 Å SiO2 results in negative shift of flatband voltage, slightly increases the surface state density, increases the low-field conductivity, reduces the high-field conductivity, improves the dielectric breakdown field, modifies the trapping behavior of the insulator, and slows down the generation rate of new surface states due to high-field electrical stress.</jats:p>

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