A one-dimensional collisional model for plasma-immersion ion implantation

DOI PDF 被引用文献2件
  • V. Vahedi
    Plasma Theory and Simulation Group, University of California, Berkeley, California 94720
  • M. A. Lieberman
    Plasma Theory and Simulation Group, University of California, Berkeley, California 94720
  • M. V. Alves
    Plasma Theory and Simulation Group, University of California, Berkeley, California 94720
  • J. P. Verboncoeur
    Plasma Theory and Simulation Group, University of California, Berkeley, California 94720
  • C. K. Birdsall
    Plasma Theory and Simulation Group, University of California, Berkeley, California 94720

書誌事項

公開日
1991-02-15
DOI
  • 10.1063/1.348774
公開者
AIP Publishing

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説明

<jats:p>Plasma-immersion ion implantation (also known as plasma-source ion implantation) is a process in which a target is immersed in a plasma and a series of large negative-voltage pulses are applied to it to extract ions from the plasma and implant them into the target. A general one-dimensional model is developed to study this process in different coordinate systems for the case in which the pressure of the neutral gas is large enough that the ion motion in the sheath can be assumed to be highly collisional.</jats:p>

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